2001. 6. 11
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS135
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
High Voltage Switching.
FEATURES
High Reliability.
Small surface mounting type (USC).
MAXIMUM RATING (Ta=25 )
USC
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
CATHODE MARK
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
300
V
Reverse Voltage
V
R
250
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
150*
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Mounted on a glass epoxy cirvuit board of 20 20mm
Pad dimension of 4 4mm
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=100mA
-
1.0
1.2
V
Reverse Current
I
R(1)
V
R
=250V
-
0.04
0.2
A
I
R(2)
V
R
=300V
-
-
100
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
1.35
3
pF
Reverse Recovery Time
t
rr
I
R
=30mA, I
F
=30mA
-
30
100
nS
Type Name
Marking
A
J
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